发明授权
- 专利标题： Planar type heterostructure avalanche photodiode
- 专利标题（中）： 平面型异质结雪崩光电二极管
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申请号： US234059申请日： 1988-08-19
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公开(公告)号： US4974061A公开(公告)日： 1990-11-27
- 发明人: Toshitaka Torikai
- 申请人： Toshitaka Torikai
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-206113 19870819; JPX62-206114 19870819
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H01L31/18
摘要：
A planar type heterostructure avalanche photodiode comprises first and second semiconductor layers having first and second forbidden energy gaps. The second forbidden energy gap is larger than the first forbidden energy gap. In the second semiconductor layer, the second forbidden energy gap is increased as a distance is increased from a hetero-interface between the first and second semiconductor layers, and a pn junction is provided. A cross sectional shape of the outer periphery of the pn junction is defined by a curvature dependent on the increase of the second forbidden energy gap.
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