发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US60866申请日： 1987-06-12
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公开(公告)号： US4975750A公开(公告)日： 1990-12-04
- 发明人: Yutaka Hayashi , Eiichi Suzuki
- 申请人： Yutaka Hayashi , Eiichi Suzuki
- 申请人地址： JPX Tokyo
- 专利权人： Agency of Industrial Science & Technology, Ministry of International Trade & Industry
- 当前专利权人： Agency of Industrial Science & Technology, Ministry of International Trade & Industry
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX52-128787 19771028
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L27/146 ; H01L27/15 ; H01L29/08 ; H01L29/73 ; H01L29/737 ; H01L29/78 ; H01L29/80 ; H01L29/88 ; H01L31/00 ; H01L31/10 ; H01L31/113 ; H01L33/04 ; H01L33/30 ; H01L33/44
摘要：
A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region and having a barrier relative to the semiconductor region. The so-formed device exhibits various effects such as amplification, negative resistance, switching, voltage or current generation, photo-electric conversion, and light-emission either upon irradiation with light or upon application of a power source thereon.
公开/授权文献
- US6128623A High performance object cache 公开/授权日：2000-10-03