发明授权
- 专利标题: Acoustic surface wave element
- 专利标题(中): 声表面波元件
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申请号: US384829申请日: 1989-07-25
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公开(公告)号: US4978879A公开(公告)日: 1990-12-18
- 发明人: Kiyoshi Satoh , Yoshiro Fujiwara , Kazushi Hashimoto
- 申请人: Kiyoshi Satoh , Yoshiro Fujiwara , Kazushi Hashimoto
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-187704 19880727; JPX63-187705 19880727; JPX63-270275 19881026; JPX63-276761 19881101
- 主分类号: H03H9/02
- IPC分类号: H03H9/02
摘要:
An acoustic surface wave element having an oscillation frequency stable against temperature changes, and a wide range of oscillation frequency adjustment, is provided by an acoustic surface wave element comprising: a substrate of a 36.degree. rotated Y-cut single crystal lithium tantalate having X, Y and Z crystal axes and a top surface and side walls; electrodes formed on the top surface of the substrate such that an acoustic surface wave is propagated in a direction of the X-axis of the substrate and an oscillation of the acoustic surface wave occurs at a predetermined frequency, the electrodes having a thickness equal to 1 to 4% of a wavelength of the acoustic surface wave at the oscillation; and a plasma CVD-deposited layer of silicon dioxide covering the electrodes and the substrate, the silicon dioxide layer having a refractive index of 1.445 to 1.486 and a thickness equal to 16 to 26% of the wavelength of the acoustic surface wave at the oscillation.
公开/授权文献
- US5988255A Portable wall and methods of making same 公开/授权日:1999-11-23
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