发明授权
- 专利标题： Heterojunction bipolar transistor
- 专利标题（中）： 异质结双极晶体管
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申请号： US415708申请日： 1989-09-29
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公开(公告)号： US4979009A公开(公告)日： 1990-12-18
- 发明人: Chushiro Kusano , Tomonori Tanoue , Katsuhiko Mitani
- 申请人： Chushiro Kusano , Tomonori Tanoue , Katsuhiko Mitani
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-141465 19870608
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331 ; H01L29/205 ; H01L29/737
摘要：
2A heterojunction bipolar transistor is disclosed in which a region of a base layer which extends in the vicinity of the interface between the base layer and an emitter layer is doped with an impurity at a higher concentration than that in the inside of the base layer to thereby form a built-in field by which carriers injected from the emitter are caused to drift to the inside of the base layer. In the transistor having this structure, the current gain does not depend on the emitter area, and it is possible to obtain a large current gain with a small emitter area.