发明授权
- 专利标题： Gettering method for a semiconductor wafer
- 专利标题（中）： 一种半导体晶圆的吸杂方法
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申请号： US275864申请日： 1988-11-25
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公开(公告)号： US4980300A公开(公告)日： 1990-12-25
- 发明人: Moriya Miyashita , Shintaro Yoshii , Keiko Sakuma
- 申请人： Moriya Miyashita , Shintaro Yoshii , Keiko Sakuma
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-300356 19871128
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/304 ; H01L21/322
摘要：
When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which the ultrasonic waves propagated, the damages serving as a back side damage.