A semiconductor memory device with a write control circuit free from error which may be induced during readout operation by noise on power line, or the like, is disclosed. The memory device comprises a write circuit for writing data to a selected memory cell, and a read circuit for reading data from the selected memory cell, a first control circuit for enabling the write circuit in response to a write enable signal, and a second control circuit for enabling the read circuit in response to a read enable signal. The first control circuit additionally receives the read enable signal and enable the write circuit only when the write enable signal is present and the read enable signal is not present.