发明授权
US4999685A Schotiky barrier height for metal contacts to III-V semiconductor
compounds
失效
金属接触到III-V半导体化合物的肖特基势垒高度
- 专利标题： Schotiky barrier height for metal contacts to III-V semiconductor compounds
- 专利标题（中）： 金属接触到III-V半导体化合物的肖特基势垒高度
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申请号： US353271申请日： 1989-05-16
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公开(公告)号： US4999685A公开(公告)日： 1991-03-12
- 发明人: James R. Waldrop , Ronald W. Grant
- 申请人： James R. Waldrop , Ronald W. Grant
- 申请人地址： DC Washington
- 专利权人： United States of America as represented by the Secretary of the Air Force
- 当前专利权人： United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址： DC Washington
- 主分类号： H01L29/47
- IPC分类号： H01L29/47
摘要：
A metal to semiconductor contact is provided wherein the Schottky barrier ight is about 1 eV and independent of the contact metal. The metal, such as Au, Cr, or Ti, is deposited on a heavily doped p-type layer of silicon which is about 15 to 30 angstroms thick. The interface layer is deposited on gallium arsenide.