发明授权
US5012318A Hybrid semiconductor device implemented by combination of heterojunction
bipolar transistor and field effect transistor
失效
通过异质结双极晶体管和场效应晶体管的组合实现的混合半导体器件
- 专利标题： Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor
- 专利标题（中）： 通过异质结双极晶体管和场效应晶体管的组合实现的混合半导体器件
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申请号： US401161申请日： 1989-09-01
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公开(公告)号： US5012318A公开(公告)日： 1991-04-30
- 发明人: Kazuhiko Honjo
- 申请人： Kazuhiko Honjo
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-222833 19880905; JPX63-222834 19880905
- 主分类号： H01L27/06
- IPC分类号： H01L27/06
摘要：
A hybrid semiconductor device according to the present invention is implemented by an unipolar compound semiconductor transistor and a heterojunction bipolar transistor respectively formed in first and second multiple-level structures formed on a semi-insulating substrate, and the uppermost level of the first multiple-level structure is formed in a common layer which further provides the lowest level of the second multiple-level structure, wherein an isolation is given between the unipolar compound semiconductor transistor and the heterojunction bipolar transistor and penetrates from the common layer into the semi-insulating substrate, so that the first and second multiple-level structures are formed through a uniform epitaxial growth advantageous in the controllability.
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