发明授权
- 专利标题: Schottky enhanced CMOS output circuit
- 专利标题(中): 肖特基增强CMOS输出电路
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申请号: US314378申请日: 1989-02-23
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公开(公告)号: US5015889A公开(公告)日: 1991-05-14
- 发明人: Robert L. Reay
- 申请人: Robert L. Reay
- 专利权人: Reay Robert L
- 当前专利权人: Reay Robert L
- 主分类号: H01L27/06
- IPC分类号: H01L27/06 ; H01L27/092 ; H03K19/003 ; H03K19/094 ; H03K19/0948
摘要:
The high impedance state of a tri-state CMOS transistor output circuit is enhanced by serially connecting first and second Schottky diodes with the P-channel transistor and the N-channel transistor whereby in the high impedance state reverse bias of the substrate/source-drain diodes of the two transistors is prevented when the output of the circuit is taken beyond the supply voltage potentials of the output circuit.
公开/授权文献
- USD270890S Spoon or similar article 公开/授权日:1983-10-11