An insulated gate type semiconductor device comprising an N channel transistor directly connected to an output terminal of the semiconductor device, the drain region of the N channel transistor comprising a region having a low-impurity concentration contiguous to the channel region, and the source region and a high-impurity concentration, comprising a region having a high-impurity concentration contiguous to the channel region, and an N channel transistor connected between the above mentioned N channel transistor and a low potential, the drain and source regions comprising regions having a high-impurity concentration contiguous to the channel region of the latter-recited N channel transistor.