发明授权
US5021944A Semiconductor memory having redundancy circuit for relieving defects 失效
具有用于消除缺陷的冗余电路的半导体存储器

Semiconductor memory having redundancy circuit for relieving defects
摘要:
A method and apparatus for quickly masking defective memory elements with substitute memory elements includes first and second memory blocks. The first memory block includes a first memory array and a second spare memory array. The second memory block includes a second memory array and a first spare memory array. A first word from the first memory array is selected concurrently with a first substitute word from the first spare memory. An address signal is decoded and then compared with data representative of a defective word. In the event it is determined, as a result of this comparison, that the first word is defective, the first substitute word is then communicated to a common data bus. Alternatively, the first word is communicated to the common data bus.
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