发明授权
US5021944A Semiconductor memory having redundancy circuit for relieving defects
失效
具有用于消除缺陷的冗余电路的半导体存储器
- 专利标题: Semiconductor memory having redundancy circuit for relieving defects
- 专利标题(中): 具有用于消除缺陷的冗余电路的半导体存储器
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申请号: US376245申请日: 1989-07-06
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公开(公告)号: US5021944A公开(公告)日: 1991-06-04
- 发明人: Katsuro Sasaki , Katsuhiro Shimohigashi , Shoji Hanamura
- 申请人: Katsuro Sasaki , Katsuhiro Shimohigashi , Shoji Hanamura
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-168708 19880708
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C29/00 ; G11C29/04
摘要:
A method and apparatus for quickly masking defective memory elements with substitute memory elements includes first and second memory blocks. The first memory block includes a first memory array and a second spare memory array. The second memory block includes a second memory array and a first spare memory array. A first word from the first memory array is selected concurrently with a first substitute word from the first spare memory. An address signal is decoded and then compared with data representative of a defective word. In the event it is determined, as a result of this comparison, that the first word is defective, the first substitute word is then communicated to a common data bus. Alternatively, the first word is communicated to the common data bus.
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