发明授权
- 专利标题: Emitter-follower circuit
- 专利标题(中): 发射体跟随器电路
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申请号: US478843申请日: 1990-02-12
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公开(公告)号: US5023570A公开(公告)日: 1991-06-11
- 发明人: Kouichi Matsumoto
- 申请人: Kouichi Matsumoto
- 申请人地址: JPX
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX
- 优先权: JPX1-41109 19890221
- 主分类号: H03F1/52
- IPC分类号: H03F1/52 ; H03F3/50 ; H03K17/0814
摘要:
An emitter-follower circuit includes a bipolar transistor of a first conductivity type operating as an emitter-follower transistor and a bipolar transistor of a second conductivity type operable as a clamping transistor. The voltage developed between the base and the emitter of the second conductivity type clamping transistor is adapted to clamp the voltage developed between the base and the collector of the first conductivity type transistor, so that such a high voltage as exceeding the breakdown voltage is not developed between the collector and the emitter of the first conductivity type transistor. The emitter-follower circuit is capable of operating with safety even when an input signal applied thereto has a wide range of direct current components.
公开/授权文献
- US5691330A Condensed thiophene compound and pharmaceutical use thereof 公开/授权日:1997-11-25
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