发明授权
- 专利标题: Isolated semiconductor macro circuit
- 专利标题(中): 隔离半导体宏电路
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申请号: US513310申请日: 1990-04-20
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公开(公告)号: US5027183A公开(公告)日: 1991-06-25
- 发明人: Daniel M. Dreps
- 申请人: Daniel M. Dreps
- 申请人地址: NY Armonk
- 专利权人: International Business Machines
- 当前专利权人: International Business Machines
- 当前专利权人地址: NY Armonk
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/761 ; H01L27/082
摘要:
Individual stages of a multistage electronic receiver include a pair of conductive isolation regions around each stage to isolate each stage from the other stages and thereby prevent feedback and external noise problems. Each pair of isolation regions includes a P+ ring and an N+ ring adjacent to each other to shunt hole carriers and electron carriers, respectively. Removal of the carriers does not have to wait for recombination of the carriers. The region which has the same conductivity type as the substrate extends entirely through an epitaxial or diffused layer to the substrate to collect hole carriers in the substrate.
公开/授权文献
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