Laser diode with BH double hetero-structure and lateral channels for lateral current limitation, whereby the laser-active stripes are provided with lateral spacer layers and these spacer layers are fashioned before the etching of the lateral channels of a semiconductor material that cannot be attached by the etchant, so that the laser-active stripes have an undamaged, straight line, lateral limitation. This laser diode has a low threshold current and a high differential efficiency given a high output power. Parasitic capacitances are voided by transverse channels and a structured metal contact.