发明授权
- 专利标题: Method of making single crystal semiconductor substrate articles and semiconductor device
- 专利标题(中): 制造单晶半导体衬底制品和半导体器件的方法
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申请号: US607568申请日: 1990-11-01
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公开(公告)号: US5030583A公开(公告)日: 1991-07-09
- 发明人: Charles P. Beetz, Jr.
- 申请人: Charles P. Beetz, Jr.
- 申请人地址: CT Danbury
- 专利权人: Advanced Technolgy Materials, Inc.
- 当前专利权人: Advanced Technolgy Materials, Inc.
- 当前专利权人地址: CT Danbury
- 主分类号: C30B25/02
- IPC分类号: C30B25/02 ; H01L21/20 ; H01L21/205 ; H01L21/308 ; H01L21/36 ; H01L29/16 ; H01L29/24 ; H01L29/812
摘要:
A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a base having a generally planar main top surface from which upwardly extends a regular array of posts, the base being formed of single crystal material which is crystallographically compatible with epitaxial single crystal materials to be deposited thereon. The single crystal epitaxial layers are formed on top surfaces of the posts which preferably have a quardrilateral cross-section, e.g., a square cross-section whose sides are from about 0.5 to about 20 micrometers in length, to accommodate the formation of substantially defect-free, single crystal epitaxial layers thereon. The single crystal epitaxial layer may be selectively doped to provide for p-type and p.sup.+ doped regions thereof, to accommodate fabrication of semiconductor devices such as field effect transistors.
公开/授权文献
- US5771363A Single-chip microcomputer having an expandable address area 公开/授权日:1998-06-23
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