发明授权
- 专利标题: Method of manufacturing active matrix panel
- 专利标题(中): 有源矩阵面板的制造方法
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申请号: US376866申请日: 1989-07-07
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公开(公告)号: US5032531A公开(公告)日: 1991-07-16
- 发明人: Ken Tsutsui , Toshihisa Tsukada , Hideaki Yamamoto , Yasuo Tanaka , Haruo Matsumaru
- 申请人: Ken Tsutsui , Toshihisa Tsukada , Hideaki Yamamoto , Yasuo Tanaka , Haruo Matsumaru
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-168853 19880708
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368 ; G09F9/30 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/78 ; H01L29/786
摘要:
In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.
公开/授权文献
- US5691547A Planar thin film transistor structures 公开/授权日:1997-11-25