发明授权
- 专利标题： Compound semiconductor device and method for surface treatment
- 专利标题（中）： 化合物半导体器件及其表面处理方法
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申请号： US546813申请日： 1990-06-20
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公开(公告)号： US5040044A公开(公告)日： 1991-08-13
- 发明人: Masahiro Noguchi , Toshihiko Ibuka
- 申请人： Masahiro Noguchi , Toshihiko Ibuka
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Monsanto Chemical Company,Mitsubishi Kasei Corporation
- 当前专利权人： Mitsubishi Monsanto Chemical Company,Mitsubishi Kasei Corporation
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX1-159330 19890621
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; H01L33/10 ; H01L33/22 ; H01L33/30 ; H01L33/36
摘要：
According to the present invention, roughness are formed on the surface of III-V group compound semiconductor to prevent total reflection, and SiNx film is formed on rough surface. This makes it possible to increase external quantum efficiency by surface roughness. Further, bond strength is increased because SiNx film is furnished on the roughness. As the result, the detachment of SiNx film is prevented, moisture resistant property is improved, and service life of LED is extended by preventing oxidation.
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