A non-volatile memory provides a signal hold circuit which uses a FAMOS instead of an input transistor of a ratiod inverting amplifier and outputs a change in a threshold value of the FAMOS, for the purpose of reducing the number of elements of the signal hold circuit. FAMOSs for programming and latching are provided respectively, and the FAMOSs are interconnected to each other at their floating gate electrodes to isolate the signal hold circuit and a program circuit and hence prevent a DC current path from being formed between those two circuits, for the purpose of miniaturization of a memory cell.