发明授权
US5053999A Semiconductor memory device having redundancy and capable of
sequentially selecting memory cell lines
失效
半导体存储器件具有冗余并且能够顺序地选择存储器单元线
- 专利标题: Semiconductor memory device having redundancy and capable of sequentially selecting memory cell lines
- 专利标题(中): 半导体存储器件具有冗余并且能够顺序地选择存储器单元线
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申请号: US500328申请日: 1990-03-28
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公开(公告)号: US5053999A公开(公告)日: 1991-10-01
- 发明人: Tetsuya Matsumura , Masahiko Yoshimoto
- 申请人: Tetsuya Matsumura , Masahiko Yoshimoto
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 主分类号: G06F5/00
- IPC分类号: G06F5/00 ; G11C29/00
摘要:
First-In First-Out (FIFO) memory device is disclosed. A ring pointer circuit sequentially and repeatedly selects memory cells in a memory cell array. When it is detected that a defective memory cell exists on a memory cell row, selection of that memory cell row is invalidated by the ring pointer circuit by cutting off a laser trimming line. In addition, by selectively cutting off laser trimming lines in a switching circuit and a redundancy ring pointer circuit, a redundancy memory cell row is selectively added in place of the defective memory cell row. Accordingly, stages required for the ring pointer circuit are maintained. In other words, the FIFO memory device having a defective memory cell is saved, resulting in improvement in yield in the manufacture.
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