发明授权
- 专利标题: Non-destructive charge domain multiplier and process thereof
- 专利标题(中): 非破坏性电荷域倍增器及其工艺
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申请号: US534250申请日: 1990-06-07
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公开(公告)号: US5054040A公开(公告)日: 1991-10-01
- 发明人: Amnon Yariv , Charles T. Neugebauer , Aharon J. Agranat
- 申请人: Amnon Yariv , Charles T. Neugebauer , Aharon J. Agranat
- 申请人地址: CA Pasadena
- 专利权人: California Institute of Technology
- 当前专利权人: California Institute of Technology
- 当前专利权人地址: CA Pasadena
- 主分类号: G11C19/28
- IPC分类号: G11C19/28
摘要:
A non-destructive charge domain multiplier and process thereof wherein the unique characteristics of the charge coupled device permits sensing the size of the charge packet as it moves past an electrode and creating a new charge packet proportional to the product of the original packet and an externally applied value. The device non-destructively senses the size of the charge packet and multiplies it with another value using a multiple metering gate variation of the "Fill and Spill" technique. The present invention therefore constitutes a unique CCD configuration which creates as an output, a charge packet proportional to the product of the charge in an input packet and an externally applied value. Thus, the present invention enables the performance of non-linear operations by CCD integrated circuits.
公开/授权文献
- US5640310A Current resonance type switching power source 公开/授权日:1997-06-17
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