发明授权
- 专利标题： Apparatus for growing vapor phase layer on semiconductor substrate
- 专利标题（中）： 用于在半导体衬底上生长气相层的装置
-
申请号： US570555申请日： 1990-08-21
-
公开(公告)号： US5063031A公开(公告)日： 1991-11-05
- 发明人: Mitsuo Sato
- 申请人： Mitsuo Sato
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX1-217845 19890824
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C23C16/458 ; C23C16/46
摘要：
A reaction tube is fastened to a base plate by a plurality of bolts. A hollow shaft is secured to the base plate by a bearing interposed therebetween, and to be rotated by a motor. A casing secured to the shaft is arranged in the reaction tube, and has an opening closed by a susceptor on which a semiconductor substrate is to be placed. A heat-generating resistor is arranged in the casing. A thermocouple detects the temperature of the substrate. A temperature control circuit controls the temperature of the resistor by the output of the thermocouple.
公开/授权文献
信息查询
IPC分类:
