发明授权
- 专利标题： Method of making an oxide isolated, lateral bipolar transistor
- 专利标题（中）： 制备氧化物隔离，横向双极晶体管的方法
-
申请号： US606828申请日： 1990-10-31
-
公开(公告)号： US5070030A公开(公告)日： 1991-12-03
- 发明人: Tatsuhiko Ikeda , Kazuyuki Sugahara , Shigeru Kusunoki , Kyusaku Nishioka
- 申请人： Tatsuhiko Ikeda , Kazuyuki Sugahara , Shigeru Kusunoki , Kyusaku Nishioka
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-287325 19861201
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/331 ; H01L29/73
摘要：
Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a bipolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.
公开/授权文献
- US5808400A Field emission display with improved viewing Characteristics 公开/授权日：1998-09-15
信息查询
IPC分类:
