发明授权
- 专利标题: Fine gold alloy wire for bonding of a semiconductor device
- 专利标题(中): 用于焊接半导体器件的精细金合金线
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申请号: US445542申请日: 1989-12-04
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公开(公告)号: US5071619A公开(公告)日: 1991-12-10
- 发明人: Naoyuki Hosoda , Masayuki Tanaka , Tamotsu Mori
- 申请人: Naoyuki Hosoda , Masayuki Tanaka , Tamotsu Mori
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Kinzoku Kabushiki Kaisha
- 当前专利权人: Mitsubishi Kinzoku Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX56-195299 19811204; JPX57-37580 19820310
- 主分类号: H01L21/24
- IPC分类号: H01L21/24 ; H01L23/49
摘要:
A fine gold alloy wire of high tensile strength for bonding semiconductor elements is disclosed. The wire consists essentially of 0.0003 to 0.010 wt % of at least one rare earth element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y, the balance being Au and incidental impurities. The wire does not present a deformed loop and has greater bond strength if it contains 0.0003 to 0.010 wt % of at least one rare earth element of the Cerium Group selected from the group consisting of La, Ce, Pr, Nd and Sm and 0.0001 to 0.0060 wt % of at least one element selected from among Ge, Be and Ca.
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