发明授权
- 专利标题: Method and apparatus for deposition of zinc sulfide films
- 专利标题(中): 锌沉积薄膜沉积的方法和装置
-
申请号: US374883申请日: 1989-06-30
-
公开(公告)号: US5077092A公开(公告)日: 1991-12-31
- 发明人: Patricia B. Smith , Larry D. Hutchins , Rudy L. York , Joseph D. Luttmer , Cecil J. Davis
- 申请人: Patricia B. Smith , Larry D. Hutchins , Rudy L. York , Joseph D. Luttmer , Cecil J. Davis
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: C23C16/30
- IPC分类号: C23C16/30 ; C23C16/44 ; H01L21/205 ; H01L31/0216 ; H01L31/10 ; H01L31/18 ; H01L33/00
摘要:
The deposition of zinc sulfide films (16) using dimethylzinc (46) and hydrogen sulfide (44) in a vacuum processor reactor (50) provides a low temperature process applicable for high volume production of infrared focal planes. These layers (16) of zinc sulfide are used as insulators and infrared anti-reflective coatings which are free of contamination relative to physical vapor deposited ZnS films. The zinc sulfide layers (16) are formed by evacuating a chamber (62) and mixing hydrogen sulfide gas (44) and dimethylzinc gas (46) at specific operating conditions until the desired ZnS film thickness is obtained. The rate of growth of the zinc sulfide (16) film is controlled by varying the temperature, pressure, and the relative flow rates of the hydrogen sulfide gas (44) and the dimethylzinc gas (46).
公开/授权文献
- US5572129A RF shield for gradient coil 公开/授权日:1996-11-05