发明授权
- 专利标题： C-MOS device and a process for manufacturing the same
- 专利标题（中）： C-MOS器件及其制造方法
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申请号： US478044申请日： 1989-01-06
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公开(公告)号： US5079183A公开(公告)日： 1992-01-07
- 发明人: Satoshi Maeda , Hiroshi Iwai
- 申请人： Satoshi Maeda , Hiroshi Iwai
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX58-128919 19830715; JPX58-138083 19830729; JPX58-138801 19830729; JPX58-138802 19830729; JPX58-180544 19830930; JPX58-182655 19830930
- 主分类号： H01L21/74
- IPC分类号： H01L21/74 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L27/105
摘要：
Element separate regions consisting of insulation material are provided on a semiconductor substrate of a first conductivity type. Element regions which respectively consist of monocrystalline semiconductor layers of the first and second conductivity types are provided in at least two adjacent regions among a plurality of island substrate regions separated by the element separate regions. An impurity layer is provided in that portion between the substrate and at least one of the element regions.
公开/授权文献
- US3941138A Machine for dispensing coinage change 公开/授权日：1976-03-02
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