发明授权
- 专利标题: Electronic device with recovery layer proximate to active layer
- 专利标题(中): 具有靠近有源层的恢复层的电子设备
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申请号: US662682申请日: 1991-02-28
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公开(公告)号: US5081513A公开(公告)日: 1992-01-14
- 发明人: Warren B. Jackson , Michael Hack
- 申请人: Warren B. Jackson , Michael Hack
- 申请人地址: CT Stamford
- 专利权人: Xerox Corporation
- 当前专利权人: Xerox Corporation
- 当前专利权人地址: CT Stamford
- 主分类号: H01L21/322
- IPC分类号: H01L21/322 ; H01L29/32 ; H01L29/84
摘要:
An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.