发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US581794申请日： 1990-09-13
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公开(公告)号： US5081519A公开(公告)日： 1992-01-14
- 发明人: Takashi Nishimura
- 申请人： Takashi Nishimura
- 申请人地址： JPX
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX
- 优先权： JPX2-11561 19900119
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/20 ; H01L21/86 ; H01L27/12
摘要：
A semiconductor device includes a single crystal III-V compound semiconductor layer disposed on a silicon on sapphire substrate comprising a silicon layer disposed on a sapphire substrate, the silicon on sapphire substrate including a silicon (001) oriented crystalline film grown on the (1102) R face of the sapphire substrate tilted 0.1 to 10 degrees toward the direction or direction of the silicon film away from the sapphire C axis.
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