A photo-mask and a method of manufacturing a photo-mask, which includes the steps of applying a resist film onto a substrate of quartz, glass and the like, subjecting the resist film to light exposure and development to form a fine resist pattern, etching the mask substrate covered by the fine resist pattern causing a non-light transmitting thin film of Cr, Ta, etc. to adhere thereon by vapor deposition, sputtering and the like, and removing the thin film on the resist pattern together with the resist film, thereby to form the photo-mask.