发明授权
- 专利标题： MBE growth technology for high quality strained III-V layers
- 专利标题（中）： 用于高品质应变III-V层的MBE增长技术
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申请号： US506137申请日： 1990-03-30
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公开(公告)号： US5091335A公开(公告)日： 1992-02-25
- 发明人: Frank J. Grunthaner , John K. Liu , Bruce R. Hancock
- 申请人： Frank J. Grunthaner , John K. Liu , Bruce R. Hancock
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人： The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- 当前专利权人地址： DC Washington
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/203
摘要：
III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).
公开/授权文献
- US6096017A Extensible absorbent articles having less extensible barriers 公开/授权日：2000-08-01