发明授权
- 专利标题: Electrically wavelength tunable semiconductor laser
- 专利标题(中): 电波长可控半导体激光器
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申请号: US596938申请日: 1990-10-15
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公开(公告)号: US5101414A公开(公告)日: 1992-03-31
- 发明人: Michael Schilling , Klaus Wunstel , Kaspar Dutting , Heinz Schweizer
- 申请人: Michael Schilling , Klaus Wunstel , Kaspar Dutting , Heinz Schweizer
- 申请人地址: NLX Amsterdam
- 专利权人: Alcatel N.V.
- 当前专利权人: Alcatel N.V.
- 当前专利权人地址: NLX Amsterdam
- 优先权: DEX3934998 19891020
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S3/0933 ; H01S5/062 ; H01S5/10 ; H01S5/12 ; H01S5/227
摘要:
A semiconductor laser in which the photons injected from its waveguide region into the laser active region are those whose energies differ from the energy sum of the chemical potential of the electron-hole pairs and the energy of the longitudinal acoustic phonons by less than one-half the thermal energy is described. A current directed into the photon emission region in the area of the Bragg grating causes photons of this energy to be injected into the laser active region which is constituted of a layer of indium gallium arsenide phosphide.
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