发明授权
- 专利标题： Dual active layer photoconductor
- 专利标题（中）： 双活性层感光体
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申请号： US212841申请日： 1988-06-29
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公开(公告)号： US5103280A公开(公告)日： 1992-04-07
- 发明人: Phillip E. Thompson , Nicolas A. Papanicolaou , J. Bradley Boos
- 申请人： Phillip E. Thompson , Nicolas A. Papanicolaou , J. Bradley Boos
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Navy
- 当前专利权人： The United States of America as represented by the Secretary of the Navy
- 当前专利权人地址： DC Washington
- 主分类号： H01L31/0304
- IPC分类号： H01L31/0304 ; H01L31/09
摘要：
A photoconductive semiconductor device having a source, a drain, and a photosensitive channel therebetween. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide.
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