发明授权
US5104817A Method of forming bipolar transistor with integral base emitter load
resistor
失效
用集成基极发射极负载电阻形成双极晶体管的方法
- 专利标题： Method of forming bipolar transistor with integral base emitter load resistor
- 专利标题（中）： 用集成基极发射极负载电阻形成双极晶体管的方法
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申请号： US496486申请日： 1990-03-20
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公开(公告)号： US5104817A公开(公告)日： 1992-04-14
- 发明人: David B. Scott
- 申请人： David B. Scott
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L21/761
- IPC分类号： H01L21/761 ; H01L21/8248 ; H01L21/8249
摘要：
The described embodiments of the present invention provide a bipolar transistor using an integrated field effect load device with one end of the load device integrally formed with the base of the transistor. The gate of the load device is connected to the emitter of the transistor. This structure is particularly advantageous in bipolar-complementary metal oxide semiconductor (BiCMOS) integrated circuitry. The unconnected end of the load device may be connected to the emitter using standard metal interconnection techniques or local interconnection techniques. In an additional embodiment of the invention, the end of the load device not connected to the base may be left unisolated to the substrate and thus connected to ground. It often occurs that the emitter of the bipolar transistor will be connected to ground and thus an automatic connection of the load device between the base and the emitter can be realized. In addition, by removing the isolation, the integrated circuit area required for the isolation may be saved.
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