发明授权
US5111052A Radiation sensor and a radiation detecting apparatus using the same
失效
辐射传感器和使用该辐射传感器的辐射检测装置
- 专利标题: Radiation sensor and a radiation detecting apparatus using the same
- 专利标题(中): 辐射传感器和使用该辐射传感器的辐射检测装置
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申请号: US435219申请日: 1989-11-09
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公开(公告)号: US5111052A公开(公告)日: 1992-05-05
- 发明人: Tetsuro Ohtsuchi , Hiroshi Tsutsui , Koichi Ohmori , Sueki Baba , Hiromasa Funakoshi , Toshiyuki Kawara , Yoshiyuki Yoshizumi
- 申请人: Tetsuro Ohtsuchi , Hiroshi Tsutsui , Koichi Ohmori , Sueki Baba , Hiromasa Funakoshi , Toshiyuki Kawara , Yoshiyuki Yoshizumi
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX63-284514 19881110; JPX1-17132 19890126
- 主分类号: G01T1/24
- IPC分类号: G01T1/24 ; H01L31/0224 ; H01L31/08 ; H01L31/115
摘要:
A radiation sensor for the measurement of photo energies of incident radiation is disclosed which comprises a semiconductor substrate sensitive to photons of the incident radiation, at least one common electrode and at least one split electrode, both of which are disposed on the same surface of the substrate, or the common electrode being disposed on one surface of the substrate and the split electrode being disposed on the other surface of the substrate at a diagonal position to the common electrode. Also disclosed is a radiation detecting apparatus using the above-mentioned radiation sensor.
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