发明授权
- 专利标题: Photovoltaic device
- 专利标题(中): 光电器件
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申请号: US502837申请日: 1990-03-30
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公开(公告)号: US5114498A公开(公告)日: 1992-05-19
- 发明人: Shingo Okamoto , Tsuyoshi Takahama , Masato Nishikuni , Shoichi Nakano
- 申请人: Shingo Okamoto , Tsuyoshi Takahama , Masato Nishikuni , Shoichi Nakano
- 申请人地址: JPX Moriguchi
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Moriguchi
- 优先权: JPX1-83104 19890331
- 主分类号: H01L31/04
- IPC分类号: H01L31/04 ; H01L31/0376 ; H01L31/075 ; H01L31/20
摘要:
A photovoltaic device includes a substrate (1, 10) having a conductive electrode (2, 10), and a first semiconductor layer (3.sub.1, 11.sub.1) of a first conductivity type, a substantially intrinsic second semiconductor layer (3.sub.2, 11.sub.2) and a third semiconductor layer (3.sub.3, 11.sub.3) of the opposite conductivity type successively deposited on the conductive electrode. The hydrogen content in at least the first and second semiconductor layer (3.sub.1, 11.sub.1) is 10% or less. At least the second semiconductor layer (3.sub.2, 11.sub.2), is made of an amorphous semiconductor layer.
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