发明授权
- 专利标题: Plasma processor
-
申请号: US333042申请日: 1989-04-04
-
公开(公告)号: US5115167A公开(公告)日: 1992-05-19
- 发明人: Hiroki Ootera , Mutsumi Tsuda
- 申请人: Hiroki Ootera , Mutsumi Tsuda
- 申请人地址: JPX
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX63-82276 19880405; JPX63-292995 19881117
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.
公开/授权文献
信息查询