发明授权
- 专利标题： Method of forming an oxide superconducting thin film having an R.sub.1 A.sub.2 C.sub.3 crystalline phase over an R.sub.2 A.sub.1 C.sub.1 crystalline phase
- 专利标题（中）： 在R2A1C1结晶相上形成具有R1A2C3结晶相的氧化物超导薄膜的方法
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申请号： US545164申请日： 1990-06-27
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公开(公告)号： US5116812A公开(公告)日： 1992-05-26
- 发明人: Mark Lelental , John A. Agostinelli , Henry J. Romanofsky
- 申请人： Mark Lelental , John A. Agostinelli , Henry J. Romanofsky
- 申请人地址： NY Rochester
- 专利权人： Eastman Kodak Company
- 当前专利权人： Eastman Kodak Company
- 当前专利权人地址： NY Rochester
- 主分类号： B32B18/00
- IPC分类号： B32B18/00 ; C04B35/45 ; H01L39/24
摘要：
This invention is directed to a method of forming an article comprised of a substrate and an electrically conductive crystalline rare earth alkaline earth copper oxide thin film containing an R.sub.1 A.sub.2 C.sub.3 crystalline phase over an R.sub.2 A.sub.1 C.sub.1 crystalline phase, where R.sub.1 A.sub.1 and C represent rare earth, alkaline earth, and copper, respectively.
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