发明授权
- 专利标题: Light responsive heterojunction semiconductor pn element
- 专利标题(中): 光响应异质半导体PN元件
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申请号: US279082申请日: 1988-12-02
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公开(公告)号: US5121183A公开(公告)日: 1992-06-09
- 发明人: Nobuyoshi Ogasawara , Kotaro Mitsui
- 申请人: Nobuyoshi Ogasawara , Kotaro Mitsui
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-136501 19880601
- 主分类号: H01L31/04
- IPC分类号: H01L31/04 ; H01L31/0216 ; H01L31/052 ; H01L31/068
摘要:
A light responsive semiconductor includes a second conductivity type semiconductor substrate, a photoelectric conversion layer comprising semiconductor layers having a pn junction, which is disposed on the second conductivity type semiconductor substrate, a buffer layer comprising a second conductivity type semiconductor layer having a larger energy band gap than that of the photoelectric conversion layer. The element further includes a light reflection layer comprising a semiconductor layer which is disposed between the second conductivity type semiconductor substrate and the buffer layer. Alternatively, a light reflection layer which is a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.