发明授权
- 专利标题： Lithography mask inspection
- 专利标题（中）： 光刻面膜检查
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申请号： US486504申请日： 1990-02-28
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公开(公告)号： US5123743A公开(公告)日： 1992-06-23
- 发明人: Martin Feldman
- 申请人： Martin Feldman
- 申请人地址： LA Baton Rouge
- 专利权人： Board of Supervisors of Louisiana State University and Agricultural and Mechanical College
- 当前专利权人： Board of Supervisors of Louisiana State University and Agricultural and Mechanical College
- 当前专利权人地址： LA Baton Rouge
- 主分类号： G03F1/22
- IPC分类号： G03F1/22 ; G03F1/84 ; G03F7/20
摘要：
A method of detecting defects in a lithography mask by exposing a first mask onto a positive resist, and a second, ostensibly identical mask onto a negative resist. Remaining particles of resist after development correspond to spots in the first mask, or to holes in the second mask. The process may be repeated with the tones of the resists reversed to detect holes in the first mask, or spots in the second mask.
公开/授权文献
- US5579082A Control device for preventing red-eye effect on camera 公开/授权日：1996-11-26
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