发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US504028申请日： 1990-04-02
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公开(公告)号： US5126818A公开(公告)日： 1992-06-30
- 发明人: Shigenari Takami , Tatsuhiko Irie , Jiro Hashizume , Yoshimasa Himura , Mitsuhiro Kani , Nobolu Yamaguchi
- 申请人： Shigenari Takami , Tatsuhiko Irie , Jiro Hashizume , Yoshimasa Himura , Mitsuhiro Kani , Nobolu Yamaguchi
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Works, Ltd.
- 当前专利权人： Matsushita Electric Works, Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX62-129195 19870526; JPX62-256007 19871009; JPX62-271137 19871027
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H01L21/60 ; H01L23/498 ; H05K1/03 ; H05K3/00 ; H05K3/06
摘要：
A semiconductor device includes a circuit pattern of a conductive thin film formed on a ceramic substrate by means of an etching, and an IC chip connected to the etched circuit pattern through a gang-bonding in which respective pads of conduction parts of the circuit pattern and of the IC chip directly contact with each other. The circuit pattern can be thereby provided densely, and contributive to a higher integration of the IC chip.
公开/授权文献
- US5557551A Method and apparatus for a thermal protection unit 公开/授权日：1996-09-17
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