A charged particle beam exposure system employs a continuously moving stage technique and a double deflection technique. The system stably deflects charged particle beams and reliably exposes a sample to the beams with no overflow. The system positively moves a major deflector from one subfield to a particular position of another subfield on the sample for period corresponding to a settling time that is usually needed for a subfield-to-subfield jump of the major deflector, and then exposes the sample to the beams.