发明授权
- 专利标题： Amorphous silicon photoelectric device
- 专利标题（中）： 非晶硅光电器件
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申请号： US309688申请日： 1989-02-10
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公开(公告)号： US5140397A公开(公告)日： 1992-08-18
- 发明人: Koichi Haga , Kenji Yamamoto , Masafumi Kumano , Akishige Murakami
- 申请人： Koichi Haga , Kenji Yamamoto , Masafumi Kumano , Akishige Murakami
- 申请人地址： JPX Tokyo JPX Shibata
- 专利权人： Ricoh Company, Ltd.,Ricoh Research Institute of General Electronics
- 当前专利权人： Ricoh Company, Ltd.,Ricoh Research Institute of General Electronics
- 当前专利权人地址： JPX Tokyo JPX Shibata
- 优先权： JPX60-49443 19850314; JPX60-58487 19850325; JPX60-58488 19850325; JPX60-76525 19850412; JPX60-76526 19850412; JPX60-76527 19850412; JPX60-82602 19850419; JPX60-84535 19850422; JPX60-84536 19850422; JPX60-85365 19850423
- 主分类号： H01L31/0376
- IPC分类号： H01L31/0376 ; H01L31/0392 ; H01L31/09 ; H01L31/20
摘要：
A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.
公开/授权文献
- US5533373A Method and apparatus for making shaped cans 公开/授权日：1996-07-09
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