In a semiconductor device, an inter-level insulating film is formed at solid crossing points between upper level interconnections and lower-level interconnections, excepting via hole portions. This means that mechanical support between interconnection levels is given by solid crossing points between interconnections. For this, a semiconductor device having high durabilities against thermal and mechanical impacts can be obtained.Further, since inter-level regions other than the solid crossing points are made vacant to form a cavity, coupling capacity can be reduced to 1/3 to 1/2 of an ordinary multilevel interconnections wherein inter-level regions are fully filled with an inter-level insulating film.