发明授权
US5144411A Method and structure for providing improved insulation in VLSI and ULSI
circuits
失效
在VLSI和ULSI电路中提供改进绝缘的方法和结构
- 专利标题： Method and structure for providing improved insulation in VLSI and ULSI circuits
- 专利标题（中）： 在VLSI和ULSI电路中提供改进绝缘的方法和结构
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申请号： US590290申请日： 1990-09-28
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公开(公告)号： US5144411A公开(公告)日： 1992-09-01
- 发明人: Carter W. Kaanta , Stanley Roberts
- 申请人： Carter W. Kaanta , Stanley Roberts
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522
摘要：
An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.