发明授权
US5145830A Method for manufacturing thin film oxide superconductors and
superconductor devices by X-ray irradiation
失效
通过X射线辐射制造薄膜氧化物超导体和超导体器件的方法
- 专利标题： Method for manufacturing thin film oxide superconductors and superconductor devices by X-ray irradiation
- 专利标题（中）： 通过X射线辐射制造薄膜氧化物超导体和超导体器件的方法
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申请号： US571095申请日： 1991-08-21
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公开(公告)号： US5145830A公开(公告)日： 1992-09-08
- 发明人: Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
- 申请人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX1-214496 19890821; JPX1-214498 19890821; JPX2-99702 19900416; JPX2-99704 19900416; JPX2-101301 19900417; JPX2-143104 19900531
- 主分类号： C01B13/14
- IPC分类号： C01B13/14 ; C01G1/00 ; C01G3/00 ; C01G15/00 ; C01G29/00 ; H01B12/06 ; H01B13/00 ; H01L39/24
摘要：
A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.