发明授权
US5150181A Amorphous thin film semiconductor device with active and inactive layers
失效
具有活性和不活动层的非晶薄膜半导体器件
- 专利标题： Amorphous thin film semiconductor device with active and inactive layers
- 专利标题（中）： 具有活性和不活动层的非晶薄膜半导体器件
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申请号： US675280申请日： 1991-03-26
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公开(公告)号： US5150181A公开(公告)日： 1992-09-22
- 发明人: Shinichi Takeda , Masato Yamanobe
- 申请人： Shinichi Takeda , Masato Yamanobe
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-078401 19900327; JPX2-078402 19900327
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/336 ; H01L29/417 ; H01L29/786 ; H01L31/113
摘要：
A film semiconductor device comprises at least active semiconductor layer, inactive semiconductor layer, ohmic layer and metal layer respectively laminated sequentially one after another on the substrate. Electrodes are formed by the ohmic layer and the metal layer.
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