发明授权
- 专利标题: Semiconductor strain sensor and manufacturing method thereof
- 专利标题(中): 半导体应变传感器及其制造方法
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申请号: US575526申请日: 1990-08-31
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公开(公告)号: US5150616A公开(公告)日: 1992-09-29
- 发明人: Munenari Kondo , Masahito Imai , Ryoichi Narita , Takushi Maeda
- 申请人: Munenari Kondo , Masahito Imai , Ryoichi Narita , Takushi Maeda
- 申请人地址: JPX Kariya
- 专利权人: Nippondenso Co., Ltd.
- 当前专利权人: Nippondenso Co., Ltd.
- 当前专利权人地址: JPX Kariya
- 优先权: JPX1-245852 19890921
- 主分类号: G01P15/02
- IPC分类号: G01P15/02 ; G01P1/02 ; G01P15/08 ; G01P15/09
摘要:
A semiconductor strain sensor having a stem with a lead hole in which a lead terminal is installed and electrically coupled to an external circuit. A sensor chip having piezo-resistors to a bride circuit is joined with a front surface of the stem. A shell is joined with the front surface of the stem by projection welding after the back surface of the stem is flattened to within a predetermined limit. A space formed by the shell and stem is filled with a damping liquid. The stem is integrally coupled to the sensor chip through an adhesive, and spacers are added to the adhesive to keep the thickness of the adhesive to a predetermined value. This arrangement can effectively prevent propagation of the welding strain of the stem from adversely affecting the sensor chip.
公开/授权文献
- US5756881A Gas analysis or leak detection process and device for same 公开/授权日:1998-05-26
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