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US5155052A Vertical field effect transistor with improved control of low resistivity region geometry 失效
垂直场效应晶体管，具有改进的低电阻率区域几何形状的控制

  • 专利标题： Vertical field effect transistor with improved control of low resistivity region geometry
  • 专利标题（中）： 垂直场效应晶体管，具有改进的低电阻率区域几何形状的控制
  • 申请号： US715286
    申请日： 1991-06-14
  • 公开(公告)号： US5155052A
    公开(公告)日： 1992-10-13
  • 发明人: Robert B. Davies
  • 申请人： Robert B. Davies
  • 专利权人： MOTOROLA Inc A Corp OF
  • 当前专利权人： MOTOROLA Inc A Corp OF
  • 主分类号： H01L21/336
  • IPC分类号： H01L21/336
Vertical field effect transistor with improved control of low resistivity region geometry
摘要：
A method for making a vertical field effect transistor with improved commutating safe operating area is provided a sidewall spacer is formed around a polysilicon gate, and used as a mask for the formation of a low resistivity region. The low resistivity region is formed underneath a source region and extends laterally to within a few thousand angstroms of the lateral boundary of the source region. A central portion of the source region is subsequently removed exposing a portion of the underlying low resistivity region and a source electrode is formed in contact with the exposed low resistivity region and the source region.
摘要（中）：

提供一种用于制造具有改善的换向安全操作区域的垂直场效应晶体管的方法，在多晶硅栅极周围形成侧壁间隔物，并用作形成低电阻率区域的掩模。 低电阻率区域形成在源极区域下方并且横向延伸到源极区域的横向边界的几千埃内。 源区域的中心部分随后被去除暴露下面的低电阻率区域的一部分，并且源极电极形成为与暴露的低电阻率区域和源极区域接触。

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