发明授权
US5159752A Scanning electron microscope based parametric testing method and
apparatus
失效
基于扫描电子显微镜的参数测试方法和装置
- 专利标题： Scanning electron microscope based parametric testing method and apparatus
- 专利标题（中）： 基于扫描电子显微镜的参数测试方法和装置
-
申请号： US595920申请日： 1990-11-30
-
公开(公告)号： US5159752A公开(公告)日： 1992-11-03
- 发明人: Shivaling S. Mahant-Shetti , Thomas J. Aton , Rebecca J. Gale
- 申请人： Shivaling S. Mahant-Shetti , Thomas J. Aton , Rebecca J. Gale
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： G01R31/305
- IPC分类号： G01R31/305
摘要：
A scanning electron microscope (28) is connected to a test structure (48) formed on a semiconductor wafer. The test structure (48) comprises a plurality of first parallel structures (54) and a plurality of second parallel structure (56) transverse to and interlocking with the first structures (54). An island (60) is formed within a grid (58) formed by the structures (54-56) and is separated therefrom. An electron beam (38) from the scanning electron microscope (28) is aimed at the structure (48) and secondary electrons emitted therefrom are visually displayed on a monitor (44). The visual display (47) provides information on whether the island (60) is electrically separated from the mesh (58) or shorted thereto by comparing the intensity of the various islands (60).
公开/授权文献
- US5744860A Power semiconductor module 公开/授权日：1998-04-28
信息查询
