发明授权
- 专利标题: High density dynamic RAM with trench capacitor
- 专利标题(中): 具有沟槽电容器的高密度动态RAM
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申请号: US758318申请日: 1991-08-27
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公开(公告)号: US5170234A公开(公告)日: 1992-12-08
- 发明人: David A. Baglee , Robert R. Doering , Gregory J. Armstrong
- 申请人: David A. Baglee , Robert R. Doering , Gregory J. Armstrong
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A word line forms the gate of the access transistor at a hole in the polysilicon field plate.