发明授权
- 专利标题: Silicon nitride sintered body and process for producing the same
- 专利标题(中): 硅氮化物烧结体及其制造方法
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申请号: US810723申请日: 1991-12-18
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公开(公告)号: US5173458A公开(公告)日: 1992-12-22
- 发明人: Takao Nishioka , Kenji Matsunuma , Koichi Sogabe , Tomoyuki Awatsu , Masaya Miyake , Takehisa Yamamoto , Akira Yamakawa
- 申请人: Takao Nishioka , Kenji Matsunuma , Koichi Sogabe , Tomoyuki Awatsu , Masaya Miyake , Takehisa Yamamoto , Akira Yamakawa
- 申请人地址: JPX
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX2-415582 19901228; JPX3-50198 19910225
- 主分类号: C04B35/593
- IPC分类号: C04B35/593
摘要:
Disclosed is a silicon nitride sintered body produced by subjecting a green compact of a mixed powder composed of 1) a silicon nitride powder having a percentage .alpha. crystallization of 93% or more and a mean grain diameter of 0.7 .mu.m or less and 2) 5 to 15% by weight in total of a first sintering aid selected from among rare earth element, yttrium oxide and lanthanide oxides and a second sintering aid consisting of aluminum oxide or nitride and at least one selected from among oxides and nitrides of Mg, Ca and Li, to primary sintering in a nitrogen gas atmosphere under a pressure of 1.1 atm or less at 1500.degree. to 1700.degree. C.; and subjecting the sintered body to secondary sintering in a nitrogen gas atmosphere under a pressure of 10 atm or more at the primary sintering temperature or below, thereby giving a sintered body wherein the relative density of the sintered body is 99% or more and the precipitation ratio of an .alpha.-Si.sub.3 N.sub.4 (including .beta.'-sialon) crystal phase ranges from 1:3 to 1:8 in terms of the peak intensity ratio in X-ray diffraction.
公开/授权文献
- US4643511A Auxiliary wire connections for side post batteries 公开/授权日:1987-02-17
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